High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4-Reference-Cited by-同舟云学术

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Published:2013-06-21 Issue:23 Volume:113 Page:233501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vilaplana R.,Gomis O.,Pérez-González E.,Ortiz H. M.,Manjón F. J.,Rodríguez-Hernández P.,Muñoz A.,Alonso-Gutiérrez P.,Sanjuán M. L.,Ursaki V. V.,Tiginyanu I. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4810854

Reference59 articles.

1. A. MacKinnon,Tables of Numerical Data and Functional Relationships in Science and Technology, Landolt-Börnstein New Series, Group III, Vol. 17, pt. h, edited by O. Madelung, M. Schulz, and H. Weiss, (Springer-Verlag, Berlin, 1985), p. 124.

2. Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4

3. Electronic band structure of ordered vacancy defect chalcopyrite compounds with formulaII−III2−VI4

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical absorption of defect chalcopyrite and defect stannite ZnGa2Se4 under high pressure;Journal of Alloys and Compounds;2023-04

2. Electronic, elastic and optical properties of ZnAl2Te4 semiconductor under isotropic pressures via first-principles calculations;Chemical Papers;2022-07-25

3. High-Pressure Synthesis of β- and α-In₂Se₃-Like Structures in Ga₂S₃;Chemistry of Materials;2022-06-21

4. Pressure-induced order–disorder transitions in β-In2S3: an experimental and theoretical study of structural and vibrational properties;Physical Chemistry Chemical Physics;2021

5. Vibrational properties of CdGa2S4 at high pressure;Journal of Applied Physics;2019-03-21