Microstructures of GaN islands on a stepped sapphire surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1459607
Reference15 articles.
1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
4. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
5. GaN Growth Using GaN Buffer Layer
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