Remotely induced high-density hollow-anode plasma and its application to fast deposition of photosensitive microcrystalline silicon thin film with preferential <110> orientation-Reference-Cited by-同舟云学术

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Remotely induced high-density hollow-anode plasma and its application to fast deposition of photosensitive microcrystalline silicon thin film with preferential <110> orientation

Published:2019-05 Issue:5 Volume:9 Page:055125
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Tabuchi Toshihiro¹,Toyoshima Yasumasa¹,Fujimoto Shinichi²,Takashiri Masayuki³

Affiliation:

1. Development Division, Komatsu Ltd., 1200 Manda, Hiratsuka, Kanagawa 254-8567, Japan

2. KELK Ltd., 3-25-1 Shinomiya, Hiratsuka, Kanagawa 254-8543, Japan

3. Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5095550

Reference27 articles.

1. Removal of volatile organic compounds from air streams and industrial flue gases by non-thermal plasma technology

2. Use of atmospheric pressure plasma to confer durable water repellent functionality and antimicrobial functionality on cotton/polyester blend

3. Plasma needle forin vivomedical treatment: recent developments and perspectives

4. Plasma Medicine

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimized hydrogen concentration within a remotely induced hollow-anode plasma for fast chemical-vapor-deposition of photosensitive and <110>-preferential microcrystalline silicon thin-films;Thin Solid Films;2020-01

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