The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC-Reference-Cited by-同舟云学术

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The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC

Published:2012-06-11 Issue:24 Volume:100 Page:241607
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Eriksson Jens,Pearce Ruth,Iakimov Tihomir,Virojanadara Chariya,Gogova Daniela,Andersson Mike,Syväjärvi Mikael,Lloyd Spetz Anita,Yakimova Rositza

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4729556

Reference31 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

3. Controlling the Electronic Structure of Bilayer Graphene

4. Morphology of graphene thin film growth on SiC(0001)

5. Charge transfer between epitaxial graphene and silicon carbide

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2. Nano-infrared imaging of epitaxial graphene on SiC revealing doping and thickness inhomogeneities;Applied Physics Letters;2024-03-18

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