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Antiferromagnetic domain wall creep driven by magnetoelectric effect

Published:2018-12 Issue:12 Volume:6 Page:121104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Shiratsuchi Yu¹,Yoshida Hiroaki¹,Kotani Yoshinori²,Toyoki Kentaro²,Nguyen Thi Van Anh¹,Nakamura Tetsuya²^ORCID,Nakatani Ryoichi¹

Affiliation:

1. Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan

2. Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1, Kouto, Sayo, Hyogo 6796198, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5053928

Reference39 articles.

1. Propagation of a Magnetic Domain Wall in a Submicrometer Magnetic Wire

2. Magnetic domain-wall dynamics in a submicrometre ferromagnetic structure

3. Dynamics of field-driven domain-wall propagation in ferromagnetic nanowires

4. Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length

5. Universality Classes for Domain Wall Motion in the Ferromagnetic Semiconductor (Ga,Mn)As

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1. Electrical control of 180° domain walls in an antiferromagnet;APL Materials;2023-09-01

2. A review on current status and mechanisms of room-temperature magnetoelectric coupling in multiferroics for device applications;Journal of Materials Science;2022-06-21

3. Antiferromagnetic domain wall dynamics in magnetoelectric MnTiO3 studied by optical imaging;Physical Review B;2022-03-14

4. Low pressure drive of the domain wall in Pt/Co/Au/Cr₂O₃/Pt thin films by the magnetoelectric effect;Applied Physics Letters;2022-02-28

5. Magnetoelectric Switching Energy of Antiferromagnetic Cr 2 O 3 Used for Spintronic Logic Devices and Memory;physica status solidi (RRL) – Rapid Research Letters;2021-10-07

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