Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1739278
Reference8 articles.
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4. An analytical model for the photodetection mechanisms in high-electron mobility transistors
5. Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light
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