Charge carrier trapping by dislocations in single crystal diamond-Reference-Cited by-同舟云学术

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Charge carrier trapping by dislocations in single crystal diamond

Published:2020-03-31 Issue:12 Volume:127 Page:125102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Schreck M.¹^ORCID,Ščajev P.²,Träger M.³,Mayr M.¹,Grünwald T.¹,Fischer M.⁴,Gsell S.⁴

Affiliation:

1. Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany

2. Institute of Photonics and Nanotechnology, Vilnius University, LT-10257 Vilnius, Lithuania

3. GSI Helmholtz-Zentrum für Schwerionenforschung, D-64291 Darmstadt, Germany

4. Augsburg Diamond Technology GmbH, Am Technologiezentrum 5, D-86159 Augsburg, Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Wirtschaft und Energie

GSI Helmholtzzentrum für Schwerionenforschung GmbH

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5140662

Reference49 articles.

1. Diamond for Particle and Photon Detection in Extreme Conditions

2. Large-area high-quality single crystal diamond

3. Synthesis of large single crystal diamond plates by high rate homoepitaxial growth using microwave plasma CVD and lift-off process

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