Lateral alignment of InGaAs quantum dots as function of spacer thickness
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3089695
Reference17 articles.
1. Hidden symmetries in the energy levels of excitonic ‘artificial atoms’
2. InAs/GaAs single-electron quantum dot qubit
3. Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots
4. Exciton Storage in Semiconductor Self-Assembled Quantum Dots
5. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
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1. Ordered quantum-ring chains grown on a quantum-dot superlattice template;Journal of Nanoparticle Research;2012-06
2. Charged excitons and biexcitons in laterally coupled (In,Ga)As quantum dots;Physical Review B;2010-12-13
3. Different shape of GaAs quantum structures under various growth conditions;Thin Solid Films;2010-09
4. Superlattice Growth via MBE and Green’s Function Techniques;Nanoscale Research Letters;2010-05-19
5. Lateral ordering, strain, and morphology evolution of InGaAs/GaAs(001) quantum dots due to high temperature postgrowth annealing;Applied Physics Letters;2010-02-22
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