Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1318371
Reference23 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
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3. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
4. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
5. Critical layer thickness for self-assembled InAs islands on GaAs
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