Interstitial oxygen loss and the formation of thermal double donors in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1389505
Reference20 articles.
1. Spectroscopic studies of 450° C thermal donors in silicon
2. Thermal double donors in silicon
3. Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon
4. Oxygen‐related thermal donors in silicon: A new structural and kinetic model
5. Some new features of thermal donor formation in silicon at T < 800 K
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1. Oxygen Precipitation in Silicon;Defects and Impurities in Silicon Materials;2015
2. Revealing the defects in electron-irradiated Czochralski silicon;Radiation Measurements;2010-03
3. Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures;Radiation Measurements;2007-04
4. Oxygen loss and thermal double donor formation in germanium;Materials Science in Semiconductor Processing;2006-08
5. Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa;The European Physical Journal Applied Physics;2004-07
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