Influence of the position of deep levels on generation‐recombination noise-Reference-Cited by-同舟云学术

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Influence of the position of deep levels on generation‐recombination noise

Published:1995-12-11 Issue:24 Volume:67 Page:3581-3583
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Godoy A.,Palma A.,Jiménez‐Tejada J. A.,Carceller J. E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115324

Reference11 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion suppression in vapor–liquid–solid Si nanowire growth by a barrier layer between the Au catalyst and substrate;Journal of Crystal Growth;2014-10

2. Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors;IEEE Transactions on Electron Devices;2012-02

3. A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors;IEEE Transactions on Electron Devices;2008-03

4. Influence of the doping profile and deep level trap characteristics on generation-recombination noise;Journal of Applied Physics;1997-10

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