Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons
Author:
Affiliation:
1. National Institute of Materials Physics, Atomistilor 405A, POB MG-7, Magurele-Ilfov 077125, Romania
2. Faculty of Physics, University of Bucharest, Atomistilor 405, Magurele-Ilfov 077125, Romania
Funder
Consiliului National al Cercetarii Stiintifice din Invatamantul Superior
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4998518
Reference56 articles.
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4. M. Moll , Ph.D. thesis, FB Physik, University of Hamburg, 1999.
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2. Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects V n O 2 (n from 1 to 3) in Silicon;physica status solidi (a);2018-09-25
3. Production and annealing of the paramagnetic defects in as-grown and oxygen doped floating zone silicon irradiated with high fluence 3.5 MeV and 27 MeV electrons;Materials Science in Semiconductor Processing;2018-08
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