Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K-Reference-Cited by-同舟云学术

Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K

Published:1997-11-15 Issue:10 Volume:82 Page:5210-5216
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lander R. J. P.,Emeleus C. J.,McGregor B. M.,Parker E. H. C.,Whall T. E.,Evans A. G. R.,Kennedy G. P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366385

Reference22 articles.

1. Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers

2. Si/Si1−xGex p-Channel Mosfets Fabricated Using a Gate Quality Dielectric Process

3. High-mobility modulation-doped SiGe-channel p-MOSFETs

4. Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on

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3. Mobility of holes in a Si/Si0.8Ge0.2/Si metal oxide semiconductor field effect transistor;Thin Solid Films;2010-07

4. New Observation of Mobility and Reliability Dependence on Mechanical Film Stress in Strained Silicon CMOSFETs;IEEE Transactions on Electron Devices;2008-06

5. Electron mobility enhancement in strained SiGe vertical n-type metal–oxide–semiconductor field-effect transistors;Applied Physics Letters;2001-01-15