Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2interfaces formed by thermal oxidation of Si-Reference-Cited by-同舟云学术

Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2interfaces formed by thermal oxidation of Si

Published:1990-05-14 Issue:20 Volume:56 Page:1983-1985
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bjorkman C. H.,Fitch J. T.,Lucovsky G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.103228

Reference13 articles.

1. The Effects of Intrinsic In-Plane Stress on the Local Atomic Structure of Thermally Grown SiO2

2. Stress Gradients in SIO2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing

3. Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing

4. SiO2 film stress distribution during thermal oxidation of Si

5. SiO2 film stress distribution during thermal oxidation of Si

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