Current transport characteristics ofP+/NAlxGa1−xAs homojunction diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349018
Reference11 articles.
1. The effect of surface recombination on current in AlxGa1−xAs heterojunctions
2. Emitter-Base Junction Size Effect on Current GainHfeof AlGaAs/GaAs Heterojunction Bipolar Transistors
3. Analysis of the operation of GaAlAs/GaAs HBTs
4. An emitter guard-ring structure for GaAs high-gain heterojunction bipolar transistors
5. Super‐gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge‐thinning design
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