Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions-Reference-Cited by-同舟云学术

Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions

Published:2022-05-01 Issue:5 Volume:12 Page:055114
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhao Dongyan¹,Wang Yubo¹,Shao Jin¹,Chen Yanning¹²,Fu Zhen²,Xia Qingtao³⁴,Wang Shuaipeng²,Li Xiuwei¹,Dong Guangzhi²,Zhou Min²,Zhu Dapeng³⁴^ORCID

Affiliation:

1. Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing, China

2. Beijing Chip Identification Technology Co., Ltd, Beijing, China

3. Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China

4. Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266600, China

Abstract

Magnetic tunnel junctions have been widely used in various applications, such as magnetic sensors and magnetic random-access memories. In the practical application of MTJs, they are usually used in series toward high sensitivity and high stability, especially for sensor applications. In this paper, serial MTJs devices on 8 in. wafers were fabricated. The temperature dependence of the tunnel magnetoresistance ratio, resistances in parallel and antiparallel configurations, and dynamic conductance were systematically investigated. The results of serial MTJs devices are consistent with a single MTJ device. This research suggests that serial MTJs can be directly used to investigate the magnetic tunneling properties of MTJ stacks.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0088020

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