Raman scattering of (GaAs)n(GaP)nshort‐period superlattices prepared by pulsed jet epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348893
Reference18 articles.
1. Molecular Layer Epitaxy
2. GaAs Atomic Layer Epitaxy by Hydride VPE
3. Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy
4. Atomic layer epitaxy of III‐V binary compounds
5. Steric hindrance effects in atomic layer epitaxy of InAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Pulsed-jet epitaxy: Application to device processes;Applied Surface Science;1994-12
2. Lattice vibration in alternating monolayers of ZnSe and ZnTe;Applied Physics Letters;1993-12-06
3. Raman scattering analysis of InAs/GaSb ultrathin-layer superlattices grown by molecular beam epitaxy;Journal of Crystal Growth;1993-02
4. Luminescence characteristics of the (GaP)n(GaAs)n/GaAs atomic layer short‐period superlattices;Journal of Applied Physics;1992-06
5. Atomic layer epitaxy of III–V compounds using metalorganic and hydride sources;Materials Science Reports;1992-04
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