Atomic layer epitaxy of III–V compounds using metalorganic and hydride sources-Reference-Cited by-同舟云学术

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Atomic layer epitaxy of III–V compounds using metalorganic and hydride sources

Published:1992-04 Issue:3 Volume:8 Page:97-146
ISSN:0920-2307
Container-title:Materials Science Reports
language:en
Short-container-title:Materials Science Reports

Author:

Ozeki M.

Publisher

Elsevier BV

Subject

General Engineering

Reference122 articles.

1. Extended Abstracts of the 16th International Conference on Solid State Devices and Materials;Suntola,1984

2. Atomic layer epitaxy

3. Atomic layer epitaxy

4. Growth of GaAs and AlAs thin films by a new atomic layer epitaxy technique

5. Recent progress in atomic layer epitaxy of III–V compounds

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2. Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method;Japanese Journal of Applied Physics;2020-02-28

3. Special Growth Techniques;Graduate Texts in Physics;2020

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5. Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy;Japanese Journal of Applied Physics;2015-12-16

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