Electrical and optical properties of hydrogenated amorphous silicon‐germanium (a‐Si1−xGex: H) films prepared by reactive ion beam sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344243
Reference33 articles.
1. Substitutional doping of amorphous silicon
2. Crucial parameters and device physics of amorphous silicon alloy tandem solar cells
3. Influence of RF Power on Properties of a-Si1-xGex:H Prepared by RF Glow Discharge Decomposition
4. Study on the structural properties of a-Si1−xSnx: H films prepared by rf sputtering
5. Properties of amorphous silicon tin alloys produced using the radio frequency glow discharge technique
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