Atom-scale optical determination of Si-oxide layer thickness during layer-by-layer oxidation: Theoretical study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1334647
Reference14 articles.
1. Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces
2. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors
3. Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H‐terminated Si surfaces
4. Surface-Induced Optical Anisotropies of Single-Domain(2×1)Reconstructed (001) Si and Ge Surfaces
5. Measurement of Interface-Induced Optical Anisotropies of a Semiconductor Heterostructure: ZnSe/GaAs(100)
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