Optical study of HgCdTe infrared photodetectors using internal photoemission spectroscopy
Author:
Funder
USARO
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870479
Reference13 articles.
1. Third-generation infrared photodetector arrays
2. Large VLWIR Hg1−xCdxTe photovoltaic detectors
3. High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates
4. Mid-wave infrared HgCdTe nBn photodetector
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1. Accuracy of activation energy from Arrhenius plots and temperature-dependent internal photoemission spectroscopy;Infrared Physics & Technology;2019-11
2. Raman investigation of optical phonons in the ion implanted Hg1−xCdxTe;Optical Materials;2016-07
3. Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy;Journal of Electronic Materials;2016-06-22
4. Directional solidification and characterization of InBi1−xSbx crystals;Journal of Materials Science: Materials in Electronics;2016-03-28
5. Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy;Applied Physics Letters;2014-10-27
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