63 MeV proton-induced mild displacement effects in long-wave infrared InAs/GaSb type-II superlattice barrier infrared detectors-Reference-Cited by-同舟云学术

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63 MeV proton-induced mild displacement effects in long-wave infrared InAs/GaSb type-II superlattice barrier infrared detectors

Published:2021-11-14 Issue:18 Volume:130 Page:184501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Alchaar R.¹^ORCID,Bataillon C.¹,Perez J.-P.¹,Gilard O.²^ORCID,Christol P.¹^ORCID

Affiliation:

1. IES, Univ. Montpellier, CNRS, Montpellier, France

2. Centre National des Etudes Spatiales, Toulouse, France

Funder

R&T CNES contract

EquipEx EXTRA, ANR

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0060794

Reference19 articles.

1. Type-II superlattice photodetectors versus HgCdTe photodiodes

2. Carrier Lifetime Measurements in Long-Wave Infrared InAs/GaSb Superlattices Under Low Excitation Conditions

3. XBnn and XBpp infrared detectors

4. Design of InAs/GaSb superlattice infrared barrier detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Irradiation Temperature Influence on the Degradation of the Electrical Performances of Midwave Infrared Type-II Superlattice Detectors;IEEE Transactions on Nuclear Science;2023-04

2. 2 MeV proton irradiation effect on the performance of InAs/GaSb type-II superlattice long-wave infrared detectors;Optics Express;2023-02-08

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