Controlling the electrical conductivity of ternary wurtzite-type and metastable β-AgGaO2 by impurity doping-Reference-Cited by-同舟云学术

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Controlling the electrical conductivity of ternary wurtzite-type and metastable β-AgGaO2 by impurity doping

Published:2018-08 Issue:8 Volume:8 Page:085203
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Nagatani Hiraku¹,Suzuki Issei²^ORCID,Takemura Sayuri²,Ohsawa Takeo³^ORCID,Ohashi Naoki³^ORCID,Fujimoto Shinji¹,Omata Takahisa²^ORCID

Affiliation:

1. Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan

3. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5046361

Reference31 articles.

1. Transparent conductive electrodes for electrochromic devices: A review

2. n-Type doped transparent conducting binary oxides: an overview

3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

4. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

5. Cu2O-based solar cells using oxide semiconductors

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1. Evaluation of ferroelectricity in a distorted wurtzite-type structure of Sc-doped LiGaO₂;RSC Advances;2024

2. Growth of β-NaGaO₂ thin films using ultrasonic spray pyrolysis;Journal of Asian Ceramic Societies;2022-04-03

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