Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3622643
Reference15 articles.
1. Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode
2. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
3. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
4. High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors
5. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
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1. Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application;IEEE Transactions on Electron Devices;2021-10
2. Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact;Chinese Physics B;2016-11
3. Impact of fluorine plasma treatment on AlGaN/GaN high electronic mobility transistors by simulated and experimental results;Microelectronic Engineering;2016-03
4. Degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive;physica status solidi (c);2014-02
5. Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode;Materials Chemistry and Physics;2014-01
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