Structural study of alloyed gold metallization contacts on InGaAsP/InP layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330364
Reference11 articles.
1. InP‐GaxIn1−xAsyP1−ydouble heterostructure for 1.5 μm wavelength
2. Ohmic contacts top‐type InP using Be‐Au metallization
3. In0.53Ga0.47As contact layer for 1.3 μm light-emitting diodes
4. On the formation of binary compounds in Au/InP system
5. Transmission electron microscope observation of dark‐spot defects in InGaAsP/InP double‐heterostructure light‐emitting diodes aged at high temperature
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