Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Published:1997-12 Issue:11 Volume:82 Page:5339-5347
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Itoh Hisayoshi,Ohshima Takeshi,Aoki Yasushi,Abe Koji,Yoshikawa Masahito,Nashiyama Isamu,Okumura Hajime,Yoshida Sadafumi,Uedono Akira,Tanigawa Shoichiro

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366301

Reference47 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. SiC devices: physics and numerical simulation

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS;Materials Science Forum;2018-06

2. Device Processing of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26

3. Effects of Al Ion Implantation on 3C-SiC Crystal Structure;Materials Science Forum;2013-01

4. Crystal recovery from Al-implantation induced damaging in 3C-SiC films;physica status solidi (RRL) - Rapid Research Letters;2012-04-18

5. Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications;MRS Proceedings;2012

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP