Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California, 93106, USA
Funder
Defense Threat Reduction Agency
Air Force Office of Scientific Research
Multidisciplinary University Research Initiative
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5096183
Reference23 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
3. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
4. MBE grown Ga2O3 and its power device applications
5. n-type dopants in (001)β-Ga2O3grown on (001)β-Ga2O3substrates by plasma-assisted molecular beam epitaxy
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor;Applied Physics Letters;2024-03-18
2. Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures;Journal of Vacuum Science & Technology A;2024-02-14
3. Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies;APL Materials;2023-11-01
4. Controllable nitrogen doping of MOCVD Ga2O3 using NH3;Applied Physics Letters;2023-06-19
5. N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD;Journal of Vacuum Science & Technology A;2023-06-13
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3