Downscaling of Pb(Zr,Ti)O3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305854
Reference9 articles.
1. Ultra-Thin PZT Films for Low-Voltage Ferroelectric Non-Volatile Memories
2. Injection-controlled size effect on switching of ferroelectric thin films
3. Thickness dependent properties of acetate-derived PLZT films
4. Evaluation of (Pb, La)(Zr, Ti)O3 (PLZT) Capacitors of Different Film Thicknesses with Pt/SrRuO3 Top Electrodes
5. Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition
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1. Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors;ACS Applied Electronic Materials;2022-03-17
2. Micromechanism of ferroelectric fatigue and enhancement of fatigue resistance of lead zirconate titanate thin films;Acta Physica Sinica;2021
3. Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes;Current Applied Physics;2019-12
4. Double doping effect on ferroelectric and leakage current behavior of Pb(Zr0.52Ti0.48)O3 thin film;Ceramics International;2019-12
5. Non-conventional mechanism of ferroelectric fatigue via cation migration;Nature Communications;2019-07-11
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