Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes-Reference-Cited by-同舟云学术

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Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes

Published:2019-12 Issue:12 Volume:19 Page:1383-1390
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Ryu Tae-Hyun,Yoon So-Jung,Na So-Yeong,Yoon Sung-Min^ORCID

Funder

National Research Foundation (NRF) of Korea

Korean government

Electronics and Telecommunications Research Institute

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference41 articles.

1. Ferroelectricity in hafnium oxide thin films;Böscke;Appl. Phys. Lett.,2011

2. Ferroelectricity in yttrium-doped hafnium oxide;Müller;J. Appl. Phys.,2011

3. Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties, Appl;Olsen;Phys. Lett.,2012

4. Ferroelectricity in Gd-doped HfO2 thin films;Müller;ECS J. Solid State Sci. Technol.,2012

5. Incipient ferroelectricity in Al‐doped HfO2 thin films;Müller;Adv. Funct. Mater.,2012

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1. Influence of annealing atmosphere on polarization behaviors of Hf0.5Zr0.5O2 ferroelectric films deposited on Ti electrodes;Ceramics International;2024-08

2. Water Dose influence to the ALD hafnium oxide process: Simulation and experiment;Materials Today Communications;2024-06

3. Optimized responsivity of a phototransistor using graphene oxide-doped solution-processed indium oxide active layer toward neuromorphic applications;Journal of Materials Chemistry C;2024

4. Effect of Ce doping on ferroelectric HfO2 from first-principles: Implications for ferroelectric thin films and phase regulation;Journal of Solid State Chemistry;2023-12

5. Improved ferroelectric and endurance properties of Hf_0.5Zr_0.5O₂ thin films by a replacement indium-tin-oxide top electrode process;Journal of Physics D: Applied Physics;2023-06-19

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