Improved material properties of amorphous silicon from silane by fluorine implantation: Application to thin‐film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342598
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4. Metastable Defects in Amorphous-Silicon Thin-Film Transistors
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of deposition conditions on stability of sputtered oxide in MOS structures;Microelectronics Reliability;1997-01
2. Effect of implanted fluorine on MOS structures with sputtered SiO2insulator;Semiconductor Science and Technology;1994-09-01
3. Thin Film Transistors with Graded SiN x Gate Dielectrics;Journal of The Electrochemical Society;1994-04-01
4. Amorphous Silicon and Silicon-Germanium Thin-Film Transistors Formed by Ion Implantation;MRS Proceedings;1993-01-01
5. a‐Si:F anda‐Si:F:H prepared by ion‐beam‐assisted reactive deposition;Journal of Applied Physics;1992-08-15
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