Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell-Reference-Cited by-同舟云学术

Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell

Published:2016-11-07 Issue:17 Volume:120 Page:175301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Wenzhu¹²^ORCID,Zhang Liping¹,Chen Renfang¹²,Meng Fanying¹,Guo Wanwu³,Bao Jian³,Liu Zhengxin¹

Affiliation:

1. Research Center for New Energy Technology (RCNET), Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, 201800 Shanghai, People's Republic of China

2. University of Chinese Academy of Sciences (USAS), Shijingshan, 100049 Beijing, People's Republic of China

3. State Key Laboratory of PV Sciences and Technology (SKL-PVST), Trinasolar, Changzhou, 213031 Jiangsu, People's Republic of China

Funder

Innovation Development Fund of Shanghai

Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966941

Reference32 articles.

1. Amorphous silicon solar cell

2. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

3. Amorphous silicon as a possible anode material for Li-ion batteries

4. Defect equilibria in undopeda-Si:H

5. New Hydrogen Distribution ina-Si:H: An NMR Study

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