Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1462849
Reference16 articles.
1. Improvement of the crystallinity of GaAs epitaxial layers grown on Si substrates assisted by electron beam irradiation
2. High quality GaAs on Si by conformal growth
3. Strain effects on optical phonons in 〈111〉 GaAs layers analyzed by Raman scattering
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