Study of effects of interelectrode spacing and preheating of source gases on hydrogenated amorphous silicon films prepared at high growth rates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360689
Reference9 articles.
1. Control of powder formation in silane discharge by cathode heating and hydrogen dilution for high‐rate deposition of hydrogenated amorphous silicon thin films
2. Particle thermophoresis in low pressure glow discharges
3. Hydrogenated amorphous silicon films deposited at high growth rates by the cathode heating technique: properties and light induced degradation
4. Monte‐Carlo simulation of electron properties in rf parallel plate capacitively coupled discharges
5. Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon
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1. Plasma-Enhanced Chemical Vapor Deposition;Journal of the Japan Society for Precision Engineering;2016
2. Combined effect of electrode gap and radio frequency on power deposition and film growth kinetics in SiH4/H2 discharges;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-01
3. Chapter 8 Applications of infrared spectroscopy in basic and industrial research;Modern Fourier: Transform Infrared Spectroscopy;2001
4. Device quality hydrogenated amorphous silicon films deposited at high growth rates;Journal of Non-Crystalline Solids;1997-04
5. Study of hydrogenated amorphous silicon films prepared at intermediate frequencies;Philosophical Magazine B;1997-04
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