Lateral straggling of B and P ions implanted in channeling and random directions of Si single crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107643
Reference6 articles.
1. Megaelectronvolt implantations in silicon very-large-scale integration
2. Two-dimensional carrier profiling
3. Range Measurements in Oriented Tungsten Single Crystals (0.1-1.0 MeV). II. A Detailed Study of the Channeling ofK42Ions
4. Theoretical Considerations on Lateral Spread of Implanted Ions
5. Calculation of projected ranges — analytical solutions and a simple general algorithm
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Lateral straggling of implanted aluminum in 4H-SiC;Applied Physics Letters;2020-01-06
2. Reduced lateral straggling of implantation induced defects in III/V heterostructures by ion implantation along channeling directions;Applied Physics Letters;1996-01
3. Phosphorus doping of silicon by proton induced nuclear reactions;Applied Physics Letters;1995-05-29
4. Channeling implants in silicon crystals;Materials Chemistry and Physics;1994-07
5. Two-dimensional spreading resistance profiling: Recent understandings and applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-01
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