Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition-Reference-Cited by-同舟云学术

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Published:2007-08-13 Issue:7 Volume:91 Page:073515
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu L.,McKerracher I.,Tan H. H.,Jagadish C.,Vukmirović N.,Harrison P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2770765

Reference13 articles.

1. High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

2. In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

3. Optoelectronic Properties of Semiconductors and Superlattices;Li E. H.,2000

4. Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment

5. Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

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