Ion-induced n-p inversion of conductivity in TiNiSn compound for thermoelectric applications
Author:
Affiliation:
1. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410501, Israel
2. Department of Innovation Technologies, South-Ukrainian National Pedagogical University, Odessa 65020, Ukraine
Funder
Israel Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5121825
Reference36 articles.
1. Displacement damage correlation of proton and silicon ion radiation in GaAs
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5. Ion and electron irradiation-induced effects in nanostructured materials
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1. Selective oxidation of thermoelectric TiNiSn;Computational Materials Science;2021-10
2. Defects in Semiconductors;Journal of Applied Physics;2020-05-21
3. Quantum-Chemical Calculations of Pure and Phosphorous Doped Ultra-small Silicon Nanocrystals;Advanced Nanomaterials for Detection of CBRN;2020
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