Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse-Reference-Cited by-同舟云学术

Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse

Published:2016-09-12 Issue:11 Volume:109 Page:113103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Henck Hugo¹^ORCID,Pierucci Debora¹,Chaste Julien¹,Naylor Carl H.²,Avila Jose³,Balan Adrian²^ORCID,Silly Mathieu G.³,Asensio Maria C.³,Sirotti Fausto³,Johnson A. T Charlie²^ORCID,Lhuillier Emmanuel⁴^ORCID,Ouerghi Abdelkarim¹

Affiliation:

1. Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N – Marcoussis, 91460 Marcoussis, France

2. Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104, USA

3. Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France

4. Institut des Nanosciences de Paris, UPMC-CNRS UMR 7588, 4 place Jussieu, boîte courrier 840, 75252 Paris cedex 05, France

Funder

Division of Emerging Frontiers in Research and Innovation (EFRI)

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4962551

Reference46 articles.

1. Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

2. Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts

5. Two-dimensional material nanophotonics

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