In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1345518
Reference21 articles.
1. DC and RF performance of 0.15 µm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate
2. Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature
3. Surface Morphology Dynamics in Strained Epitaxial InGaAs
4. A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy
5. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate;Semiconductor Science and Technology;2003-08-11
2. In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate;Applied Surface Science;2003-07
3. In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate;Journal of Crystal Growth;2003-01
4. In situ detection of an initial elastic relaxation stage during growth of In0.2Ga0.8As on GaAs(0 0 1);Applied Surface Science;2002-03
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