Properties of plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345015
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1. Identification and Suppression of Si-H2 Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH4 Plasma CVD;Plasma and Fusion Research;2019-09-09
2. Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon;Journal of Applied Physics;2002-01-15
3. Dynamics of the Raman background decay;Journal of Raman Spectroscopy;1997-07
4. Chemistry of Amorphous Silicon Deposition Processes;Plasma Deposition of Amorphous Silicon-Based Materials;1995
5. Equilibrium and nonequilibrium gap-state distribution in amorphous silicon;Physical Review B;1993-05-15
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