Void nucleation on intentionally added defects in Al interconnects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124464
Reference21 articles.
1. Electromigration and IC Interconnects
2. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2
3. Stress evolution due to electromigration in confined metal lines
4. Void Nucleation in Passivated Interconnect Lines: Effects of Site Geometries, Interfaces, and Interface Flaws
5. In-Situ Tem-Investigation of Stress- and Electromigration- Induced Void Formation and Growth in Passivated Al-Interconnects
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1. Voids formed from solidifying tin particles in solid aluminium;Philosophical Magazine Letters;2010-11
2. Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride;Journal of Applied Physics;2002-03-15
3. A Robust Multilevel Interconnect Module for Subquartermicrometer Complementary Metal Oxide Semiconductor Technology Integration;Journal of The Electrochemical Society;2002
4. Effects of dielectric materials on electromigration failure;Journal of Applied Physics;2001-06-15
5. The evolution of the resistance of aluminum interconnects during electromigration;Microelectronics Reliability;2000-06
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