Hysteresis phenomena in reverse biased InAsSbP∕InAs heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2220532
Reference8 articles.
1. Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure
2. Growth and Characterization of High-Quality InAs0.86Sb0.05P0.09Alloy by Liquid-Phase Epitaxy
3. High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm
4. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
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1. Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later);Semiconductors;2019-02
2. P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array;Infrared Physics & Technology;2016-09
3. 4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation;MRS Proceedings;2014
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