Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN-Reference-Cited by-同舟云学术

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Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Published:1999-05-31 Issue:22 Volume:74 Page:3353-3355
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ochalski Tomasz J.,Gil Bernard,Lefebvre Pierre,Grandjean Nicolas,Leroux Mathieu,Massies Jean,Nakamura Shuji,Morkoç Hadis

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.123342

Reference13 articles.

1. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

2. Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition

3. Energy band‐gap bowing parameter in an AlxGa1−xN alloy

4. Electronic structure and equilibrium properties ofGaxAl1−xN alloys

5. High quality self‐nucleated AlxGa1−xN layers on (00.1) sapphire by low‐pressure metalorganic chemical vapor deposition

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4. High-throughput first-principles investigation of GaN-AlN ternary system;Superlattices and Microstructures;2019-05

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