Room temperature photo-oxidation of NH4F-prepared H–Si(111)(1×1) and Hx–Si(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1785835
Reference27 articles.
1. K. A. Morse, Ph.D. thesis, Stanford University, 2003.
2. Oxidation of silicon: the VLSI gate dielectric
3. Photochemical Hydrogen Desorption from H-Terminated Silicon(111) by VUV Photons
4. Direct Photodesorption of Atomic Hydrogen from Si(100) at 157 nm: Experiment and Simulation
5. Photoreactivity of Unsaturated Compounds with Hydrogen-Terminated Silicon(111)
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