Zn0.85Cd0.15Se active layers on graded-composition InxGa1−xAs buffer layers-Reference-Cited by-同舟云学术

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Zn0.85Cd0.15Se active layers on graded-composition InxGa1−xAs buffer layers

Published:1999-06-15 Issue:12 Volume:85 Page:8160-8169
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Müller B. H.,Lantier R.,Sorba L.,Heun S.,Rubini S.,Lazzarino M.,Franciosi A.,Napolitani E.,Romanato F.,Drigo A. V.,Lazzarini L.,Salviati G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370655

Reference57 articles.

1. Blue‐green laser diodes

2. Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

3. 100 h II-VI blue-green laser diode

4. Room temperature laser operation of wide band-gap II–VI laser diodes.

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1. Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs;Journal of Materials Science;2023-06

2. Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs;Crystal Growth & Design;2021-02-23

3. Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE;Crystal Growth & Design;2016-03-24

4. Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE;Applied Surface Science;2015-09

5. InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer;Applied Physics Letters;2013-01-21

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