Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress-Reference-Cited by-同舟云学术

Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Published:2012-04-09 Issue:15 Volume:100 Page:152102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lo Wen-Hung,Chang Ting-Chang,Tsai Jyun-Yu,Dai Chih-Hao,Chen Ching-En,Ho Szu-Han,Chen Hua-Mao,Cheng Osbert,Huang Cheng-Tung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3697644

Reference17 articles.

1. Scaling the gate dielectric: Materials, integration, and reliability

2. Review on high-k dielectrics reliability issues

3. Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

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