Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes-Reference-Cited by-同舟云学术

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Published:2016-10-07 Issue:13 Volume:120 Page:135701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dinh Duc V.¹^ORCID,Corbett Brian¹,Parbrook Peter J.¹²,Koslow Ingrid. L.³,Rychetsky Monir³,Guttmann Martin³,Wernicke Tim³,Kneissl Michael³,Mounir Christian⁴^ORCID,Schwarz Ulrich⁵^ORCID,Glaab Johannes⁶,Netzel Carsten⁶,Brunner Frank⁶,Weyers Markus⁶

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

2. School of Engineering, University College Cork, Cork, Ireland

3. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

4. Institut für Mikrosystemtechnik, Albert-Ludwigs-Universität Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany

5. Institut für Physik, Technische Universität Chemnitz, Reichenhainer Straße 70, 09126 Chemnitz, Germany

6. Ferdinand-Braun-Institut, Leibniz-Insitut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Funder

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963757

Reference60 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

3. Strain-induced polarization in wurtzite III-nitride semipolar layers

4. High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

5. Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

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