Lateral reaction of polycrystalline silicon film with overlapping aluminum film-Reference-Cited by-同舟云学术

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Lateral reaction of polycrystalline silicon film with overlapping aluminum film

Published:1985-02-15 Issue:4 Volume:57 Page:1143-1146
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Arai Hitoshi,Kohda Shigeto,Kitano Yoshitaka

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.334558

Reference9 articles.

1. Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI

2. Interaction of Al layers with polycrystalline Si

3. Diffusion‐limited Si precipitation in evaporated Al/Si films

4. Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits

5. Solid‐phase reactions of a polycrystalline silicon film with an overlapping aluminum film

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications;Polycrystalline Silicon for Integrated Circuits and Displays;1998

2. Dopant Diffusion and Segregation;Polycrystalline Silicon for Integrated Circuits and Displays;1998

3. The Thermally Activated Diffusion of Si into Large-and Small-Grained Aluminium Substrates;Physica Status Solidi (a);1991-06-16

4. Applications;Polycrystalline Silicon for Integrated Circuit Applications;1988

5. Dopant Diffusion and Segregation;Polycrystalline Silicon for Integrated Circuit Applications;1988

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