Key experimental information on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3703570
Reference28 articles.
1. Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
2. Understanding the phase-change mechanism of rewritable optical media
3. Neutron diffraction study on the structural phase transition in GeTe
4. Application of Bond Constraint Theory to the Switchable Optical Memory MaterialGe2Sb2Te5
5. Structural basis for the fast phase change of Ge2Sb2Te5: Ring statistics analogy between the crystal and amorphous states
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