Modeling of Multilayer Structures with Tunable Optical Characteristics

Abstract

Phase transition materials, in particular chalcogenide glassy semiconductors and Ge–Sb–Te system materials are of interest for application in optical information processing technologies. The uniqueness of these materials lies in the fact that they have a low-energy, fast and reversible phase transition, leading to a significant change in the refractive index in the infrared region of the optical spectrum. The model calculations carried out in the work made it possible to investigate the transformation of optical properties in multilayer structures consisting of SiO2, Si, Si3N4 layers and an active layer of a phase transition material when its phase state changes. The aim of these studies was to fulfill the condition of the lowest optical losses during transmission and reflection of radiation of 1550 nm in such structures in the case of amorphous and crystalline states of the active layer, respectively. As a result, the nine-layer “SiO2//111 nm Si/277 nm SiO2/111 nm Si/251 nm SiO2/10 nm Ge2Sb2Se4Te/241 nm SiO2/110 nm Si/276 nm SiO2/112 nm Si//SiO2” structure that most satisfies the specified conditions was designed.