A WSe2/MoSe2 heterostructure photovoltaic device
Author:
Affiliation:
1. Photonics Laboratory, ETH Zürich, Zürich 8092, Switzerland
2. National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Funder
Schweizerische Nationalfonds zur Förderung der Wissenschaftlichen Forschung (Schweizerische Nationalfonds)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931621
Reference11 articles.
1. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
2. Atomically thin p–n junctions with van der Waals heterointerfaces
3. Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes
4. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
5. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
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